Multiphonon hole trapping from first principles
نویسندگان
چکیده
Nonradiative multiphonon capture of carriers into the gate dielectrics of metal-oxide-semiconductor systems and its involvement with the negative bias temperature instability is discussed. A simple method for the extraction of the line-shape function from an atomistic bulk defect model is suggested and applied to defect models in alpha quartz. Electronic structures are described using density functional theory. © 2011 American Vacuum Society. DOI: 10.1116/1.3533269
منابع مشابه
Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities
Article history: Received 4 September 2011 Accepted 5 September 2011 Available online 2 October 2011 0026-2714/$ see front matter 2011 Elsevier Ltd. A doi:10.1016/j.microrel.2011.09.002 E-mail address: [email protected] Charge trapping at oxide defects fundamentally affects the reliability of MOS transistors. In particular, charge trapping has long been made responsible for random telegr...
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